Rüdiger Quay

According to our database1, Rüdiger Quay authored at least 13 papers between 2004 and 2020.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2020
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.
Microelectron. Reliab., 2018

2017
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.
Microelectron. Reliab., 2017

2016
Performance of tri-gate AlGaN/GaN HEMTs.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Degradation of 0.25 μm GaN HEMTs under high temperature stress test.
Microelectron. Reliab., 2015

A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC.
Proceedings of the 2015 IEEE Radio and Wireless Symposium, 2015

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.
Microelectron. Reliab., 2014

2011
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.
Microelectron. Reliab., 2011

2010
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz.
IEICE Trans. Electron., 2010

2009
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.
Microelectron. Reliab., 2009

2006
InP DHBT Based IC Technology for over 80 Gbit/s Data Communications.
IEICE Trans. Electron., 2006

2004
Reliability of 70 nm metamorphic HEMTs.
Microelectron. Reliab., 2004


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