Maximilian Dammann

According to our database1, Maximilian Dammann authored at least 14 papers between 2002 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2021
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.
Microelectron. Reliab., 2018

2017
Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects.
Microelectron. Reliab., 2017

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.
Microelectron. Reliab., 2017

2015
Degradation of 0.25 μm GaN HEMTs under high temperature stress test.
Microelectron. Reliab., 2015

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.
Microelectron. Reliab., 2014

Sequential Atmospheric Pressure Plasma-Assisted Laser Ablation of Photovoltaic Cover Glass for Improved Contour Accuracy.
Micromachines, 2014

2013
Qualification of 50 V GaN on SiC technology for RF power amplifiers.
Microelectron. Reliab., 2013

2011
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.
Microelectron. Reliab., 2011

2009
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.
Microelectron. Reliab., 2009

2004
Reliability of 70 nm metamorphic HEMTs.
Microelectron. Reliab., 2004

2002
Reliability of Metamorphic HEMTs for Power Applications.
Microelectron. Reliab., 2002

High-field step-stress and long term stability of PHEMTs with different gate and recess lengths.
Microelectron. Reliab., 2002


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