Andreas Graff

According to our database, Andreas Graff authored at least 11 papers between 2014 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress.

Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, Sebastian Krause, Andreas Graff, Michél Simon-Najasek

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling.

Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michél Simon-Najasek, David Poppitz

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay

Microelectron. Reliab., 2018

Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices.

C. Monachon, Marcin Stefan Zielinski, J. Berney, D. Poppitz, Andreas Graff, Steffen Breuer, Lutz Kirste

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Physical failure analysis methods for wide band gap semiconductor devices.

Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck

Microelectron. Reliab., 2017

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.

Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek

Microelectron. Reliab., 2017

2016

Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures.

Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann, Helmut Jung, Hervé Blanck

Microelectron. Reliab., 2016

2015

Degradation of 0.25 μm GaN HEMTs under high temperature stress test.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle

Microelectron. Reliab., 2015

2014

Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures.

Michél Simon-Najasek, Susanne Hübner, Frank Altmann, Andreas Graff

Microelectron. Reliab., 2014

Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials.

Benjamin März, Andreas Graff, Robert Klengel, Matthias Petzold

Microelectron. Reliab., 2014