T. Rödle

According to our database, T. Rödle authored at least 4 papers between 2007 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

Degradation of 0.25 μm GaN HEMTs under high temperature stress test.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle

Microelectron. Reliab., 2015

2013

Qualification of 50 V GaN on SiC technology for RF power amplifiers.

P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann

Microelectron. Reliab., 2013

2009

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.

Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson

Microelectron. Reliab., 2009

2007

Selecting an appropriate ESD protection for discrete RF power LDMOSTs.

Theo Smedes, J. de Boet, T. Rödle

Microelectron. Reliab., 2007