Sebastiano Russo

According to our database, Sebastiano Russo authored at least 8 papers between 2002 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Power Cycling Body Diode Current Flow on SiC MOSFET Device.

Giovanni Corrente, Nella Bentivegna, Sebastiano Russo

Proceedings of the 28th IEEE International Symposium on On-Line Testing and Robust System Design, 2022

2019

Fast transient thermomechanical stress to set a pressure-assisted sintering process.

Marco Santopá, Sebastiano Russo, Marco Torrisi, Marco Renna, Alessandro Sitta, Michele Calabretta

Proceedings of the 15th Conference on Ph.D. Research in Microelectronics and Electronics, 2019

2018

Numerical approach to predict power device reliability.

Alessandro Sitta, Sebastiano Russo, Gaetano Bazzano, Daniela Cavallaro, Giuseppe Greco, Michele Calabretta

Proceedings of the 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2018

2013

NORA based TDC in 90 nm CMOS.

Nicola Petra, Sebastiano Russo, Davide De Caro, Ettore Napoli, Giancarlo Barbarino, Antonio G. M. Strollo

Microelectron. J., 2013

2011

High temperature long term stability of SiC Schottky diodes.

Antonio Testa, Salvatore De Caro, Sebastiano Russo, D. Patti, Lucia Torrisi

Microelectron. Reliab., 2011

2010

Reliability of planar, Super-Junction and trench low voltage power MOSFETs.

Antonio Testa, Salvatore De Caro, Saverio Panarello, Salvatore Patanè, Sebastiano Russo, D. Patti, S. Poma, Romeo Letor

Microelectron. Reliab., 2010

2005

Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation.

Andrea Irace, Giovanni Breglio, Paolo Spirito, Romeo Letor, Sebastiano Russo

Microelectron. Reliab., 2005

2002

Fast thermal fatigue on top metal layer of power devices.

Sebastiano Russo, Romeo Letor, Orazio Viscuso, Lucia Torrisi, Gianluigi Vitali

Microelectron. Reliab., 2002