Sechun Park

According to our database, Sechun Park authored at least 2 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput.

Wanik Cho, Chanhui Jeong, Jongwoo Kim, Jongseok Jung, Keunseon Ahn, Jayoon Goo, Sangkyu Lee, Kayoung Cho, Tei Cho, Dauni Kim, Gwan Park, Yushin Ahn, Sooyeol Chai, Gwihan Ko, Sunyoung Jung, Eunwoo Jo, Taehun Park, Jinhyun Ban, Cheoljoong Park, Jae Hyun Park, Sanghoon Oh, Sojin Jeong, Youngjun Kwak, Kyungsoo Jeong, Jinyeop Kim, Minchol Shin, Eunho Yang, Taisik Shin, Youngil Kim, Jiseong Mun, Chanyang Ryu, Huihyeon Park, Changwan Ha, Jong Tai Park, Peng Zhang, Sooyong Park, Rezaul Haque, Hang Tian, Sunghwa Ok, Wonbeom Choi, Junyoun Lim, Dongkyu Yoon, Sechun Park, Wonsun Park, Kichang Gwon, Seungpil Lee, Hwang Huh, Woopyo Jeong, Jungdal Choi

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2023

A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$.

Bvunarvul Kim, Seungpil Lee, Beomseok Hah, Kanawoo Park, Yongsoon Park, Kangwook Jo, Yujong Noh, Hyeon-Cheon Seol, Hyunsoo Lee, Jae-Hyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonauk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha

Proceedings of the IEEE International Solid- State Circuits Conference, 2023