Seonyong Cha
According to our database1,
Seonyong Cha
authored at least 7 papers
between 2022 and 2023.
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Bibliography
2023
QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Demonstration of crystalline IGZO transistor with high thermal stability for memory applications.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022
Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory.
Proceedings of the IEEE International Memory Workshop, 2022
Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges.
Proceedings of the IEEE International Memory Workshop, 2022