Stephen Moss

According to our database, Stephen Moss authored at least 5 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications.

P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications.

P. Srinivasan, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI.

Sameer H. Jain, Dimitri Lederer, Arvind Kumar, Sudesh Saroop, Chris Prindle, P. Srinivasan, Wen Liu, Ravi Achanta, Erdem Kaltalioglu, Stephen Moss, Greg Freeman, Paul Colestock

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2020

Passive Intermodulation (PIM) Test and Measurement.

Stephen Moss, Elanchezhian Veeramani, Joris Angelo Sundaram Jerome

Proceedings of the 29th IEEE North Atlantic Test Workshop, 2020

A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications.

P. Srinivasan, Paul Colestock, Thomas Samuels, Stephen Moss, Fernando Guarin, Byoung Min

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020