Martin Gall

According to our database, Martin Gall authored at least 12 papers between 1998 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Self-aligned Fiber Attach on Monolithic Silicon Photonic Chips: Moisture Effect and Hermetic Seal.

Zhuo-Jie Wu, Ping-Chuan Wang, Seungman Choi, Patrick Justison, Martin Gall, Jae Kyu Cho, Takako Hirokawa, Yusheng Bian, Thomas Houghton, Vaishnavi Karra, Dan Moy, Karen Nummy, Dave Riggs, Norman Robson, Ian Melville, Ken Giewont

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2023

RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications.

P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects.

Zhenjun Zhang, Matthias Kraatz, Meike Hauschildt, Seungman Choi, André Clausner, Ehrenfried Zschech, Martin Gall

Proceedings of the IEEE International Reliability Physics Symposium, 2021

RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications.

P. Srinivasan, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018

Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling.

M. Kraatz, Christoph Sander, André Clausner, M. Hauschildt, Yvonne Standke, Martin Gall, Ehrenfried Zschech

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation.

André Clausner, Simon Schlipf, Gottfried Kurz, Michael Otto, Jens Paul, Kay-Uwe Giering, Jens Warmuth, André Lange, Roland Jancke, Andreas Aal, Rüdiger Rosenkranz, Martin Gall, Ehrenfried Zschech

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments.

Jens Warmuth, Kay-Uwe Giering, André Lange, André Clausner, Simon Schlipf, Gottfried Kurz, Michael Otto, Jens Paul, Roland Jancke, Andreas Aal, Martin Gall, Ehrenfried Zschech

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2014

Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration.

Christoph Sander, Yvonne Standke, Sven Niese, Rüdiger Rosenkranz, André Clausner, Martin Gall, Ehrenfried Zschech

Microelectron. Reliab., 2014

Empirical BEOL-TDDB evaluation based on I(t)-trace analysis.

Oliver Aubel, Armand Beyer, Georg Talut, Martin Gall

Microelectron. Reliab., 2014

2006

Impact of stress-induced backflow on full-chip electromigration risk assessment.

Haldun Haznedar, Martin Gall, Vladimir Zolotov, Pon Sung Ku, Chanhee Oh, Rajendran Panda

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2006

2004

A Methodology for Chip-Level Electromigration Risk Assessment and Product Qualification.

Chanhee Oh, Haldun Haznedar, Martin Gall, Amir Grinshpon, Vladimir Zolotov, Pon Sung Ku, Rajendran Panda

Proceedings of the 5th International Symposium on Quality of Electronic Design (ISQED 2004), 2004

1998

A 220-mm², four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture.

Toshiaki Kirihata, Martin Gall, Kohji Hosokawa, Jean-Marc Dortu, Hing Wong, Peter Pfefferl, Brian L. Ji, Oliver Weinfurtner, John K. DeBrosse, Hartmud Terletzki, Manfred Selz, Wayne Ellis, Matthew R. Wordeman, Oliver Kiehl

IEEE J. Solid State Circuits, 1998