P. Srinivasan

Orcid: 0000-0002-1427-1851

Affiliations:
  • Globalfoundries Inc., Malta, NY, USA
  • New Jersey Institute of Technology, Newark, NJ, USA (former)


According to our database1, P. Srinivasan authored at least 25 papers between 2004 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Excellent RF Product HTOL reliability of 5G mmWave beamformer chip fabricated using GF 45RFSOI technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Optimized LDMOS Offering for Power Management and RF Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

6G Roadmap for Semiconductor Technologies: Challenges and Advances.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Back gate bias effect and layout dependence on Random Telegraph Noise in FDSOI technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

CMOS RF reliability for 5G mmWave applications - Challenges and Opportunities.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2020
A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Silicon Based RF Reliability Challenges for 5G Communications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Novel Oxide Top-Off Process Enabling Reliable PC-CA TDDB on IO Devices with Self Aligned Contact.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2017
Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices.
Microelectron. Reliab., 2017

2013
Voltage reference design using 1 V power supply in 0.13 µm CMOS technology.
Proceedings of the 4th IEEE Latin American Symposium on Circuits and Systems, 2013

2012
Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants.
Microelectron. Reliab., 2012

2011
Noise and reliability in advanced CMOS devices for low power applications.
Proceedings of the 24th Symposium on Integrated Circuits and Systems Design, 2011

2010
Tool wear monitoring using artificial neural network based on extended Kalman filter weight updation with transformed input patterns.
J. Intell. Manuf., 2010

2009
Correlating op-amp circuit noise with device flicker (1/f) noise for analog design applications.
Proceedings of the Annual IEEE International SoC Conference, SoCC 2009, 2009

2004
Screening of Hot Electron Effect During Plasma Processing.
Proceedings of the 17th International Conference on VLSI Design (VLSI Design 2004), 2004


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