Takahiro Iizuka

Orcid: 0000-0003-0680-6737

According to our database1, Takahiro Iizuka authored at least 16 papers between 2005 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
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PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits.
Proceedings of the International Symposium on Devices, Circuits and Systems, 2023

2021
Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation.
IEEE Access, 2021

History effect investigation in SOI MOSFET for minimizing impact on circuit performance.
Proceedings of the 4th International Symposium on Devices, Circuits and Systems, 2021

2020
Carrier Dynamics in Lightly-doped Resistance Region in Power MOSFETs.
Proceedings of the 3rd International Symposium on Devices, Circuits and Systems, 2020

Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation.
Proceedings of the 3rd International Symposium on Devices, Circuits and Systems, 2020

History Effect on Circuit Performance of SOI-MOSFETs.
Proceedings of the 3rd International Symposium on Devices, Circuits and Systems, 2020

2019
Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs.
IEICE Trans. Electron., 2019

Validation on Duality in Impact-ionization Carrier Generation at the Onset of Snapback in Power MOSFETs.
Proceedings of the 2nd International Symposium on Devices, Circuits and Systems, 2019

2018
Compact Modeling for Power Efficient Circuit Design.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

2013
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions.
IEICE Trans. Electron., 2013

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation.
IEICE Trans. Electron., 2013

2012
Compact Modeling of Expansion Effects in LDMOS.
IEICE Trans. Electron., 2012

2009
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors.
IEICE Trans. Electron., 2009

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation.
IEICE Trans. Electron., 2009

2008
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations.
Math. Comput. Simul., 2008

2005
MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime.
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005


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