Chenyue Ma

According to our database1, Chenyue Ma authored at least 11 papers between 2008 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2021
Late Breaking Results: Incremental 3D Global Routing Considering Cell Movement.
Proceedings of the 58th ACM/IEEE Design Automation Conference, 2021

CongestNN: An Bi-Directional Congestion Prediction Framework for Large-Scale Heterogeneous FPGAs.
Proceedings of the 14th IEEE International Conference on ASIC, 2021

2017
A universal approach for signal dependent circuit reliability simulation.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016
Concurrent device/circuit aging for general reliability simulations.
Proceedings of the International Symposium on Integrated Circuits, 2016

2015
Investigation of nitrogen enhanced NBTI effect using the universal prediction model.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2013
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions.
IEICE Trans. Electron., 2013

2011
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection.
Microelectron. Reliab., 2011

2010
Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device.
Microelectron. Reliab., 2010

Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits.
Proceedings of the 11th International Symposium on Quality of Electronic Design (ISQED 2010), 2010

2009
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability.
Proceedings of the 10th International Symposium on Quality of Electronic Design (ISQED 2009), 2009

2008
Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure.
Proceedings of the 9th International Symposium on Quality of Electronic Design (ISQED 2008), 2008


  Loading...