Thierry Poiroux

According to our database, Thierry Poiroux authored at least 4 papers between 2016 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Ultra-Thin-Body and Buried Oxide FD-SOI next generation nodes and eNVM technologies for advanced IC design.

Claire Fenouillet-Béranger, Laurent Fesquet, Rihab Chouk, Gabriel Pares, Baudoin Martineau, Marie Claire Cyrille, Thierry Poiroux, Olivier Billoint, Dominique Noguet

Proceedings of the 28th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems, 2025

2021

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2018

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs.

Krishna Pradeep, Theano A. Karatsori, Thierry Poiroux, Andre Juge, Patrick Scheer, Gilles Gouget, Emmanuel Josse, Gérard Ghibaudo

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016

Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model.

Salim El Ghouli, Patrick Scheer, Michel Minondo, Andre Juge, Thierry Poiroux, Jean-Michel Sallese, Christophe Lallement

Proceedings of the 2016 MIXDES, 2016