Emmanuel Josse

According to our database, Emmanuel Josse authored at least 5 papers between 2014 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs.

Krishna Pradeep, Theano A. Karatsori, Thierry Poiroux, Andre Juge, Patrick Scheer, Gilles Gouget, Emmanuel Josse, Gérard Ghibaudo

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016

Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration.

R. Berthelon, François Andrieu, P. Perreau, E. Baylac, A. Pofelski, Emmanuel Josse, Didier Dutartre, A. Claverie, Michel Haond

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs.

Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Static and dynamic power management in 14nm FDSOI technology.

Olivier Weber, Emmanuel Josse, J. Mazurier, Michel Haond

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014