Toke Meyer Andersen

According to our database1, Toke Meyer Andersen authored at least 15 papers between 2013 and 2016.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2016
Implementation of Low-Power 6-8 b 30-90 GS/s Time-Interleaved ADCs With Optimized Input Bandwidth in 32 nm CMOS.
IEEE J. Solid State Circuits, 2016

2015
10.6 continuous-time linear equalization with programmable active-peaking transistor arrays in a 14nm FinFET 2mW/Gb/s 16Gb/s 2-Tap speculative DFE receiver.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

20.3 A feedforward controlled on-chip switched-capacitor voltage regulator delivering 10W in 32nm SOI CMOS.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

A 3.6pJ/b 56Gb/s 4-PAM receiver with 6-Bit TI-SAR ADC and quarter-rate speculative 2-tap DFE in 32 nm CMOS.
Proceedings of the ESSCIRC Conference 2015, 2015

2014
A 16 Gb/s 3.7 mW/Gb/s 8-Tap DFE Receiver and Baud-Rate CDR With 31 kppm Tracking Bandwidth.
IEEE J. Solid State Circuits, 2014

22.1 A 90GS/s 8b 667mW 64× interleaved SAR ADC in 32nm digital SOI CMOS.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

4.7 A sub-ns response on-chip switched-capacitor DC-DC voltage regulator delivering 3.7W/mm<sup>2</sup> at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

A DDR3/4 memory link TX supporting 24-40 Ω, 0.8-1.6 V, 0.8-5.0 Gb/s with slew rate control and thin oxide output stages in 22-nm CMOS SOI.
Proceedings of the ESSCIRC 2014, 2014

A 16 Gb/s receiver with DC wander compensated rail-to-rail AC coupling and passive linear-equalizer in 22 nm CMOS.
Proceedings of the ESSCIRC 2014, 2014

A 110 mW 6 bit 36 GS/s interleaved SAR ADC for 100 GBE occupying 0.048 mm<sup>2</sup> in 32 nm SOI CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2014

2013
A 3.1 mW 8b 1.2 GS/s Single-Channel Asynchronous SAR ADC With Alternate Comparators for Enhanced Speed in 32 nm Digital SOI CMOS.
IEEE J. Solid State Circuits, 2013

A 10 Gb/s 8-Tap 6b 2-PAM/4-PAM Tomlinson-Harashima Precoding Transmitter for Future Memory-Link Applications in 22-nm SOI CMOS.
IEEE J. Solid State Circuits, 2013

A 3.1mW 8b 1.2GS/s single-channel asynchronous SAR ADC with alternate comparators for enhanced speed in 32nm digital SOI CMOS.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

An 8Gb/s 1.5mW/Gb/s 8-tap 6b NRZ/PAM-4 Tomlinson-Harashima precoding transmitter for future memory-link applications in 22nm CMOS.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

A 5.7mW/Gb/s 24-to-240Ω 1.6Gb/s thin-oxide DDR transmitter with 1.9-to-7.6V/ns clock-feathering slew-rate control in 22nm CMOS.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013


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