Toshihiro Ohki

According to our database, Toshihiro Ohki authored at least 6 papers between 2005 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki

IEICE Trans. Electron., November, 2023

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier.

Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe

IEICE Trans. Electron., October, 2023

2021

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers.

Masaru Sato, Yoshitaka Niida, Atsushi Yamada, Junji Kotani, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura

IEICE Trans. Electron., 2021

2019

Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates.

Yusuke Kumazaki, Keiji Watanabe, Toshihiro Ohki, Junji Kotani, Shiro Ozaki, Yoshitaka Niida, Kozo Makiyama, Yuichi Minoura, Naoya Okamoto, Norikazu Nakamura

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2014

Millimeter-Wave GaN HEMT for Power Amplifier Applications.

Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe

IEICE Trans. Electron., 2014

2005

A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique.

Yusuke Inoue, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Tsuyoshi Takahashi, Hisao Shigematsu, Tatsuya Hirose

IEEE J. Solid State Circuits, 2005