Masaru Sato

Affiliations:

Fujitsu Laboratories, Atsugi, Japan
Georgia Institute of Technology, Atlanta, GA, USA
Tokyo Institute of Technology, Tokyo, Japan (PhD 2014)

According to our database¹, Masaru Sato authored at least 19 papers between 2001 and 2024.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

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In proceedings

Article

PhD thesis

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Other

Bibliography

2024

An X-band Spatial Power Combining Using Rectangular Waveguide with Dielectric Lens.

[BibT_eX]

[DOI]

Proceedings of the IEEE Radio and Wireless Symposium, 2024

2023

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

[BibT_eX]

[DOI]

IEICE Trans. Electron., November, 2023

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier.

[BibT_eX]

[DOI]

IEICE Trans. Electron., October, 2023

2021

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers.

[BibT_eX]

[DOI]

IEICE Trans. Electron., 2021

2019

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz.

[BibT_eX]

[DOI]

IEICE Trans. Electron., 2019

Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves.

[BibT_eX]

[DOI]

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2017

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers.

[BibT_eX]

[DOI]

IEICE Trans. Electron., 2017

2016

300-GHz Amplifier in 75-nm InP HEMT Technology.

[BibT_eX]

[DOI]

IEICE Trans. Electron., 2016

2015

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis.

[BibT_eX]

[DOI]

IEICE Trans. Electron., 2015

2014

Millimeter-Wave GaN HEMT for Power Amplifier Applications.

[BibT_eX]

[DOI]

IEICE Trans. Electron., 2014

2013

Submillimeter-wave InP HEMT amplifiers with current-reuse topology.

[BibT_eX]

[DOI]

Proceedings of the 2013 IEEE Radio and Wireless Symposium, 2013

2012

A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors.

[BibT_eX]

[DOI]

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2012

2010

A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors.

[BibT_eX]

[DOI]

Proceedings of the 36th European Solid-State Circuits Conference, 2010

2009

Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager.

[BibT_eX]

[DOI]

Masaru Sato

Tatsuya Hirose

Koji Mizuno

IEICE Trans. Electron., 2009

A 77GHz transceiver in 90nm CMOS.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008

60 and 77GHz Power Amplifiers in Standard 90nm CMOS.

[BibT_eX]

[DOI]

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2005

A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2005

2002

A 54-GHz distributed amplifier with 6-V<sub>PP</sub> output for a 40-Gb/s LiNbO<sub>3</sub> modulator driver.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2002

2001

A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2001

Masaru Sato

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