Naoya Okamoto

According to our database, Naoya Okamoto authored at least 12 papers between 2011 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki

IEICE Trans. Electron., November, 2023

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier.

Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe

IEICE Trans. Electron., October, 2023

2021

Corrigendum to "Volume penalization for inhomogeneous Neumann boundary conditions modeling scalar flux in complicated geometry" [J. Comput. Phys. 390 (2019) 452-469].

Teluo Sakurai, Katsunori Yoshimatsu, Naoya Okamoto, Kai Schneider

J. Comput. Phys., 2021

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers.

Masaru Sato, Yoshitaka Niida, Atsushi Yamada, Junji Kotani, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura

IEICE Trans. Electron., 2021

2019

Volume penalization for inhomogeneous Neumann boundary conditions modeling scalar flux in complicated geometry.

Teluo Sakurai, Katsunori Yoshimatsu, Naoya Okamoto, Kai Schneider

J. Comput. Phys., 2019

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz.

Shinpei Yamashita, Michihiko Suhara, Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto, Kiyoto Asakawa

IEICE Trans. Electron., 2019

Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves.

Tsuyoshi Takahashi, Kenichi Kawaguchi, Masaru Sato, Michihiko Suhara, Naoya Okamoto

Proceedings of the 49th European Solid-State Device Research Conference, 2019

Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates.

Yusuke Kumazaki, Keiji Watanabe, Toshihiro Ohki, Junji Kotani, Shiro Ozaki, Yoshitaka Niida, Kozo Makiyama, Yuichi Minoura, Naoya Okamoto, Norikazu Nakamura

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Application of Stochastic Point-Based Rendering to Laser-Scanned Point Clouds of Various Cultural Heritage Objects.

Kyoko Hasegawa, Liang Li, Naoya Okamoto, Shu Yanai, Hiroshi Yamaguchi, Atsushi Okamoto, Satoshi Tanaka

Int. J. Autom. Technol., 2018

2017

Highlighting Feature Regions Combined with See-Through Visualization of Laser-Scanned Cultural Heritage.

Naoya Okamoto, Kyoko Hasegawa, Liang Li, Atsushi Okamoto, Satoshi Tanaka

Proceedings of the 2017 International Conference on Culture and Computing, 2017

2014

Millimeter-Wave GaN HEMT for Power Amplifier Applications.

Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe

IEICE Trans. Electron., 2014

2011

Coherent Vorticity Simulation of Three-Dimensional Forced Homogeneous Isotropic Turbulence.

Naoya Okamoto, Katsunori Yoshimatsu, Kai Schneider, Marie Farge, Yukio Kaneda

Multiscale Model. Simul., 2011