Yasuhiro Nakasha

According to our database, Yasuhiro Nakasha authored at least 13 papers between 2002 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki

IEICE Trans. Electron., November, 2023

2022

First Demonstration of Crosstalk-Free (< -38.5 dB) 32-ch DWDM Demultiplexer on Standard Si PIC Platform.

Tomoyuki Akiyama, Motoyuki Nishizawa, Akio Sugama, Yasuhiro Nakasha, Shinsuke Tanaka, Yu Tanaka, Takeshi Hoshida

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2022

2021

Demonstration of Crosstalk-Free WDM Demultiplexing on Si Nanowire PIC Controlled by Si CMOS ASIC.

Tomoyuki Akiyama, Motoyuki Nishizawa, Akio Sugama, Yasuhiro Nakasha, Shinsuke Tanaka, Yu Tanaka, Shoichiro Oda, Takeshi Hoshida

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2021

Temperature-Tolerant Crosstalk-Free WDM Demultiplexing Using Controller-Integrated Cascaded AMZ Triplet (CAT) on Si Nano-Waveguide PIC Platform.

Tomoyuki Akiyama, Motoyuki Nishizawa, Akio Sugama, Yasuhiro Nakasha, Shinsuke Tanaka, Yu Tanaka, Takeshi Hoshida

Proceedings of the European Conference on Optical Communication, 2021

2019

A Demultiplexer Immune from Fabrication-Error Impairments as an Enabler of Compact High-Channel-Count (> 64 ch) Dense WDM Systems on Low-End Si PIC Platforms.

Tomoyuki Akiyama, Shoichiro Oda, Seok-Hwan Jeong, Yasuhiro Nakasha, Yu Tanaka, Takeshi Hoshida

Proceedings of the 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC), 2019

2017

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers.

Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin

IEICE Trans. Electron., 2017

2016

300-GHz Amplifier in 75-nm InP HEMT Technology.

Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara

IEICE Trans. Electron., 2016

2015

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis.

Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara

IEICE Trans. Electron., 2015

Foreword.

Yasuhiro Nakasha

IEICE Trans. Electron., 2015

2013

Submillimeter-wave InP HEMT amplifiers with current-reuse topology.

Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara

Proceedings of the 2013 IEEE Radio and Wireless Symposium, 2013

2011

Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter.

Yasuhiro Nakasha, Naoki Hara, Kiyomichi Araki

IEICE Trans. Electron., 2011

2007

A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology.

Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Shinji Yamaura, Tsuyoshi Takahashi, Kozo Makiyama, Tatsuya Hirose

IEEE J. Solid State Circuits, 2007

2002

A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology.

Yasuhiro Nakasha, Toshihide Suzuki, Hideki Kano, Kouji Tsukashima, Akio Ohya, Ken Sawada, Kozo Makiyama, Tsuyoshi Takahashi, Masahiro Nishi, Tatsuya Hirose, Masahiko Takikawa, Yuu Watanabe

IEEE J. Solid State Circuits, 2002