Yongqing Huang
Orcid: 0000-0003-2067-3205
According to our database1,
Yongqing Huang
authored at least 18 papers
between 2006 and 2024.
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Bibliography
2024
Parameter extraction for photodiode equivalent circuit model based on hybrid genetic algorithm.
Microelectron. J., January, 2024
2023
A Phase-Sensitive Optical Time Domain Reflectometry with Non-Uniform Frequency Multiplexed NLFM Pulse.
Sensors, October, 2023
2022
Proceedings of the 22nd IEEE International Conference on Communication Technology, 2022
2020
An Efficient Certificateless Aggregate Signature Scheme for Blockchain-Based Medical Cyber Physical Systems.
Sensors, 2020
2019
An Aggregate Signature Scheme Based on a Trapdoor Hash Function for the Internet of Things.
Sensors, 2019
J. Intell. Fuzzy Syst., 2019
Experiment on VCSEL Composed of Special Structure DBRs in Integrated Optoelectronic Chip.
IEEE Access, 2019
A Hybrid Blockchain System Based on Parallel Distributed Architecture for Central Bank Digital Currency.
Proceedings of the Fuzzy Systems and Data Mining V, 2019
Proceedings of the Cyberspace Safety and Security - 11th International Symposium, 2019
2016
Proceedings of the Eighth International Conference on Ubiquitous and Future Networks, 2016
2009
Growth of B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As, B<sub>x</sub>Al<sub>1-</sub><sub>x</sub>As and B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub><sub>-</sub><sub>y</sub>In<sub>y</sub>As epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition.
Microelectron. J., 2009
A Novel DWDM-PON Utilizing Downstream IRZ Signal for Upstream Data Re-modulation with High Extinction Ratio.
Proceedings of the 7th Annual Conference on Communication Networks and Services Research, 2009
2008
LP-MOCVD growth of ternary B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH<sub>3</sub>.
Microelectron. J., 2008
2007
Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD.
Microelectron. J., 2007
Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD.
Microelectron. J., 2007
Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition.
Microelectron. J., 2007
2006
Heteroepitaxy of In<sub>0.53</sub>Ga<sub>0.47</sub>As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications.
Microelectron. J., 2006