Yoshikazu Saitoh

According to our database, Yoshikazu Saitoh authored at least 3 papers between 2003 and 2005.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2005

A low-power four-transistor SRAM cell with a stacked vertical poly-silicon PMOS and a dual-word-voltage scheme.

Akira Kotabe, Kenichi Osada, Naoki Kitai, Mio Fujioka, Shiro Kamohara, Masahiro Moniwa, Sadayuki Morita, Yoshikazu Saitoh

IEEE J. Solid State Circuits, 2005

2004

SRAM immunity to cosmic-ray-induced multierrors based on analysis of an induced parasitic bipolar effect.

Kenichi Osada, Ken Yamaguchi, Yoshikazu Saitoh, Takayuki Kawahara

IEEE J. Solid State Circuits, 2004

2003

16.7-fA/cell tunnel-leakage-suppressed 16-Mb SRAM for handling cosmic-ray-induced multierrors.

Kenichi Osada, Yoshikazu Saitoh, Eishi Ibe, Koichiro Ishibashi

IEEE J. Solid State Circuits, 2003