Zhi Jin

Orcid: 0000-0002-7630-0021

Affiliations:

Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China
Jilin University, Changchun, China (PhD 1999)

According to our database¹, Zhi Jin authored at least 8 papers between 2014 and 2025.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

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PhD thesis

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Bibliography

2025

A 112-Gb/s PAM-4 Retimer Transceiver With Jitter-Filtering Clocking Scheme and BER Optimization Technique in 28-nm CMOS.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, July, 2025

A 100 Gb/s PAM4 receiver analog front-end with 33.1-dB boost in 28-nm CMOS process.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2025

2024

Radiation effects modeling of InP-based HEMT based on neural networks.

[BibT_eX]

[DOI]

Microelectron. J., 2024

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT.

[BibT_eX]

[DOI]

Microelectron. J., 2024

Intrinsic point defects investigation in InAlAs with extrapolated defect transition level.

[BibT_eX]

[DOI]

Microelectron. J., 2024

2022

A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier Using Enhanced f<sub>T</sub>-Doubler Technique.

[BibT_eX]

[DOI]

IEEE Trans. Circuits Syst. II Express Briefs, 2022

2017

Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs.

[BibT_eX]

[DOI]

Frontiers Inf. Technol. Electron. Eng., 2017

2014

A 4-GS/s 8-bit two-channel time-interleaved folding and interpolating ADC.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2014

Zhi Jin

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