A. Zainuddin

According to our database, A. Zainuddin authored at least 3 papers between 2015 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs.

M. Iqbal Mahmud, Amit Gupta, Maria Toledano-Luque, N. Rao Mavilla, J. Johnson, P. Srinivasan, A. Zainuddin, S. Rao, Salvatore Cimino, Byoung Min, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Understanding gate metal work function (mWF) impact on device reliability - A holistic approach.

P. Srinivasan, Rakesh Ranjan, S. Cimino, A. Zainuddin, B. Kannan, L. Pantisano, I. Mahmud, G. Dilliway, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

A 14 nm SoC platform technology featuring 2^nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um² SRAM cells, optimized for low power, high performance and high density SoC products.

Chia-Hong Jan, F. Al-amoody, H.-Y. Chang, T. Chang, Y.-W. Chen, N. Dias, Walid M. Hafez, Doug B. Ingerly, M. Jang, Eric Karl, S. K.-Y. Shi, K. Komeyli, H. Kilambi, A. Kumar, K. Byon, C.-G. Lee, J. Lee, T. Leo, P.-C. Liu, N. Nidhi, R. Olac-vaw, C. Petersburg, K. Phoa, Chetan Prasad, C. Quincy, R. Ramaswamy, T. Rana, L. Rockford, Aravinth Subramaniam, C. Tsai, Peter Vandervoorn, L. Yang, A. Zainuddin, Peng Bai

Proceedings of the Symposium on VLSI Circuits, 2015