Aarti Rathi

According to our database, Aarti Rathi authored at least 9 papers between 2021 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability.

Hao Yu, R. ElKashlan, Meng-Che Tsai, Yi Yang, Mamoun Guenach, Ying-Chun Kuo, Sachin Yadav, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, D. Xiao, Claude Desset, AliReza Alian, Uthayasankaran Peralagu, V. Afans'ev, T.-L. Wu, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses.

Yi Yang, Hao Yu, Meng-Che Tsai, Wei-Tung Lin, Ying-Chun Kuo, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian-Li Wu

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications.

Aarti Rathi, Barry J. O'Sullivan, R. ElKashlan, B. Kazemi Esfeh, Arturo Sibaja Hernandez, Hao Yu, AliReza Alian, Sachin Yadav, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Impact of Hot-Carrier Degradation on Flicker Noise (1/f) in 45-nm PD-SOI Floating-Body NFETs.

Shruti Pathak, Aarti Rathi, Abhisek Dixit, P. Srinivasan, Oscar H. Gonzalez

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers.

Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, Aarti Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications.

Aarti Rathi, Abhisek Dixit, Naga Satish, P. Srinivasan, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications.

Aarti Rathi, Abhisek Dixit, P. Srinivasan, Oscar Huerta-Gonzalez, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications.

Asifa Amin, Aarti Rathi, Sujit K. Singh, Abhisek Dixit, Oscar Huerta-Gonzalez, P. Srinivasan, Fernando Guarin

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications.

Aarti Rathi, P. Srinivasan, Fernando Guarin, Abhisek Dixit

Proceedings of the IEEE International Reliability Physics Symposium, 2021