Asad Fayyaz

According to our database, Asad Fayyaz authored at least 8 papers between 2014 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate.

Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Avalanche ruggedness of parallel SiC power MOSFETs.

Asad Fayyaz, Besar Asllani, Alberto Castellazzi, Michele Riccio, Andrea Irace

Microelectron. Reliab., 2018

<i>V</i>_<i>TH</i> subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson

Microelectron. Reliab., 2018

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs.

Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, Thorsten Oeder, Martin Pfost

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

Body diode reliability investigation of SiC power MOSFETs.

Asad Fayyaz, Gianpaolo Romano, Alberto Castellazzi

Microelectron. Reliab., 2016

SiC power MOSFETs performance, robustness and technology maturity.

Alberto Castellazzi, Asad Fayyaz, Gianpaolo Romano, Li Yang, Michele Riccio, Andrea Irace

Microelectron. Reliab., 2016

2015

High temperature pulsed-gate robustness testing of SiC power MOSFETs.

Asad Fayyaz, Alberto Castellazzi

Microelectron. Reliab., 2015

2014

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.

Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace

Microelectron. Reliab., 2014