Dominique Planson

According to our database, Dominique Planson authored at least 5 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration.

Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier

Proceedings of the 30th International Conference on Mixed Design of Integrated Circuits and System, 2023

2022

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Microelectron. J., 2022

2019

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate.

Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

<i>V</i>_<i>TH</i> subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson

Microelectron. Reliab., 2018

SiC lateral Schottky diode technology for integrated smart power converter.

Jean-François Mogniotte, Christophe Raynaud, Mihai Lazar, Bruno Allard, Dominique Planson

Proceedings of the IEEE International Conference on Industrial Technology, 2018