Hervé Morel

According to our database, Hervé Morel authored at least 23 papers between 2001 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs.

Oriol Avino-Salvado, Cyril Buttay, Ferran Bonet, Christophe Raynaud, Pascal Bevilacqua, José Rebollo, Hervé Morel, Xavier Perpiñà

IEEE Trans. Ind. Electron., May, 2024

2023

Robust Regulation of a Power Flow Controller via Nonlinear Integral Action.

Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Hervé Morel, Xuefang Lin-Shi

IEEE Trans. Control. Syst. Technol., July, 2023

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration.

Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier

Proceedings of the 30th International Conference on Mixed Design of Integrated Circuits and System, 2023

2022

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Microelectron. J., 2022

2021

Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design.

Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Xuefang Lin-Shi, Hervé Morel

Proceedings of the 2021 60th IEEE Conference on Decision and Control (CDC), 2021

2019

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate.

Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson

Proceedings of the IEEE International Reliability Physics Symposium, 2019

A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices.

Thilini Wickramasinghe, Stephane Azzopardi, Bruno Allard, Cyril Buttay, Charles Joubert, Christian Martin, Jean-François Mogniotte, Hervé Morel, Pascal Bevilacqua, Thanh-Long Le

Proceedings of the IECON 2019, 2019

2018

Measurement and analysis of SiC-MOSFET threshold voltage shift.

Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel

Microelectron. Reliab., 2018

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode.

Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre

Microelectron. Reliab., 2018

<i>V</i>_<i>TH</i> subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson

Microelectron. Reliab., 2018

Robustness study of 1700 V 45 mΩ SiC MOSFETs.

Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel

Proceedings of the IEEE International Conference on Industrial Technology, 2018

2017

A Novel Approach to Accurately Determine the t_q Parameter of Thyristors.

Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes

IEEE Trans. Ind. Electron., 2017

High temperature ageing of microelectronics assemblies with SAC solder joints.

Wissam Sabbah, Pierre Bondue, Oriol Avino-Salvado, Cyril Buttay, Hélène Frémont, Alexandrine Guédon-Gracia, Hervé Morel

Microelectron. Reliab., 2017

Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling.

Wissam Sabbah, Faical Arabi, Oriol Avino-Salvado, Cyril Buttay, L. Théolier, Hervé Morel

Microelectron. Reliab., 2017

SiC power devices packaging with a short-circuit failure mode capability.

Ilyas Dchar, Cyril Buttay, Hervé Morel

Microelectron. Reliab., 2017

On the extraction of the design parameters of power BJTs.

Mehrez Oueslati, Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes

Proceedings of the International Conference on Control, Automation and Diagnosis, 2017

2016

Avalanche robustness of SiC Schottky diode.

Ilyas Dchar, Cyril Buttay, Hervé Morel

Microelectron. Reliab., 2016

2015

A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems.

Atef Jedidi, Hatem Garrab, Hervé Morel, Kamel Besbes

IEEE Trans. Ind. Electron., 2015

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs.

Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel

Microelectron. Reliab., 2015

2011

Inverse Models of Voltage and Current Probes.

Kaiçar Ammous, Hervé Morel, Anis Ammous

IEEE Trans. Instrum. Meas., 2011

2010

Analysis of Power Switching Losses Accounting Probe Modeling.

Kaiçar Ammous, Hervé Morel, Anis Ammous

IEEE Trans. Instrum. Meas., 2010

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications.

Tarek Ben Salah, Sofiane Khachroumi, Hervé Morel

Sensors, 2010

2001

On the validity of the standard SPICE model of the diode for simulation in power electronics.

Nouri Massmoudi, Djébé M'bairi, Bruno Allard, Hervé Morel

IEEE Trans. Ind. Electron., 2001