Benjamin Rebuffat

According to our database, Benjamin Rebuffat authored at least 2 papers between 2013 and 2014.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2014

Effect of AC stress on oxide TDDB and trapped charge in interface states.

Benjamin Rebuffat, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Romain Laffont

Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

2013

Effect of ions presence in the SiOCH inter metal dielectric structure.

Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont

Proceedings of the European Solid-State Device Research Conference, 2013