Dae-Gi Bae

According to our database, Dae-Gi Bae authored at least 2 papers between 2003 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2008

A 100nm Double-Stacked 500MHz 72Mb Separate-I/O Synchronous SRAM with Automatic Cell-Bias Scheme and Adaptive Block Redundancy.

Kyomin Sohn, Young-Ho Suh, Young-Jae Son, Daesik Yim, Kang-Young Kim, Dae-Gi Bae, Ted Kang, Hoon Lim, Soon-Moon Jung, Hyun-Geun Byun, Young-Hyun Jun, Kinam Kim

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2003

A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM.

Uk-Rae Cho, Tae-Hyoung Kim, Yong-Jin Yoon, Jong-Cheol Lee, Dae-Gi Bae, Nam-Seog Kim, Kang-Young Kim, Young-Jae Son, Jeong-Suk Yang, Kwon-Il Sohn, Sung-Tae Kim, In-Yeol Lee, Kwang-Jin Lee, Tae-Gyoung Kang, Su-Chul Kim, Kee-Sik Ahn, Hyun-Geun Byun

IEEE J. Solid State Circuits, 2003