Seungjae Yei

According to our database, Seungjae Yei authored at least 3 papers between 2024 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2026

A 3× Offset, 2.9× Power, 1.3× Sensing Time, and 4× Area Reduction Direct Input Transfer Offset Cancel DRAM IO Sense Amplifier With Static Current-Free Pre-Sensing.

Do-Yoon Lim, Sehee Lim, Dong Han Ko, In-Jun Jung, Giseok Kim, Dohan Kim, Donggyun Ha, Sunjong Park, Hohyun Chae, Seungjae Yei, Taehui Na, Seong-Ook Jung

IEEE J. Solid State Circuits, March, 2026

2025

SRAM BL Predriven Write Operation With Row and Voltage Auto-Tracking Replica BL in Resistance-Dominated Technology Nodes.

Keonhee Cho, Minjune Yeo, Seungjae Yei, Giseok Kim, Sangyeop Baeck, Seong-Ook Jung

IEEE Trans. Very Large Scale Integr. Syst., May, 2025

2024

15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node.

Minjune Yeo, Keonhee Cho, Giseok Kim, Won Joon Jo, Jisang Oh, Sekeon Kim, Kyeongrim Baek, Sungho Park, Seungjae Yei, Seong-Ook Jung

Proceedings of the IEEE International Solid-State Circuits Conference, 2024