Eunryeong Lee

According to our database, Eunryeong Lee authored at least 4 papers between 2014 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy.

Seokbo Shim, Sungho Kim, Jooyoung Bae, Keunsik Ko, Eunryeong Lee, Kwidong Kim, Kyeongtae Kim, Sangho Lee, Jinhoon Hyun, Insung Koh, Joonhong Park, Minjeong Kim, Sunhye Shin, Dongha Lee, Yunyoung Lee, Sangah Hyun, Wonjohn Choi, Dain Im, Dongheon Lee, Jieun Jang, Sangho Lee, Junhyun Chun, Jonghoon Oh, Jinkook Kim, Seok Hee Lee

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017

23.3 A 4.8Gb/s/pin 2Gb LPDDR4 SDRAM with sub-100µA self-refresh current for IoT applications.

Nohhyup Kwak, Saeng-Hwan Kim, Kyong Ha Lee, Chang-Ki Baek, Mun Seon Jang, Yongsuk Joo, Seung-Hun Lee, Wooyoung Lee, Eunryeong Lee, Donghee Han, Jaeyeol Kang, Jung Ho Lim, Jae-Beom Park, Kyung-Tae Kim, Sunki Cho, Sung Woo Han, Jee Yeon Keh, Jun Hyun Chun, Jonghoon Oh, Seok Hee Lee

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2015

A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques.

Keunsoo Song, Sangkwon Lee, Dongkyun Kim, Youngbo Shim, Sangil Park, Bokrim Ko, Duckhwa Hong, Yongsuk Joo, Wooyoung Lee, Yongdeok Cho, Wooyeol Shin, Jaewoong Yun, Hyengouk Lee, Jeonghun Lee, Eunryeong Lee, Namkyu Jang, Jaemo Yang, Haekang Jung, Joohwan Cho, Hyeongon Kim, Jinkook Kim

IEEE J. Solid State Circuits, 2015

2014

A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques.

Keunsoo Song, Sangkwon Lee, Dongkyun Kim, Youngbo Shim, Sangil Park, Bokrim Ko, Duckhwa Hong, Yongsuk Joo, Wooyoung Lee, Yongdeok Cho, Wooyeol Shin, Jaewoong Yun, Hyengouk Lee, Jeonghun Lee, Eunryeong Lee, Jaemo Yang, Haekang Jung, Namkyu Jang, Joohwan Cho, Hyeongon Kim

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014