G. Prechtl

According to our database, G. Prechtl authored at least 2 papers between 2015 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

Exploring the thermal limit of GaN power devices under extreme overload conditions.

Florian Peter Pribahsnik, Michael Nelhiebel, M. Mataln, Mirko Bernardoni, G. Prechtl, Frank Altmann, David Poppitz, A. Lindemann

Microelectron. Reliab., 2017

2015

Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters.

Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier

Proceedings of the IEEE International Reliability Physics Symposium, 2015