Gregor Pobegen

According to our database, Gregor Pobegen authored at least 8 papers between 2011 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping.

Bernhard Ruch, Gregor Pobegen, Christian Schleich, Tibor Grasser

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Similarities and Differences of BTI in SiC and Si Power MOSFETs.

Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs.

Thomas Aichinger, Gerald Rescher, Gregor Pobegen

Microelectron. Reliab., 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Instabilities of SiC MOSFETs during use conditions and following bias temperature stress.

Gregor Pobegen, Andreas Krassnig

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters.

Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier

Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements.

Roberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser

Proceedings of the 45th European Solid State Device Research Conference, 2015

2011

Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.

Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel

Microelectron. Reliab., 2011