George H. Chang

According to our database, George H. Chang authored at least 2 papers between 2013 and 2014.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2014

13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.

Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, George H. Chang, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Sreedhar Natarajan, Jonathan Chang

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2013

A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications.

Jonathan Chang, Yen-Huei Chen, Hank Cheng, Wei-Min Chan, Hung-Jen Liao, Quincy Li, Stanley Chang, Sreedhar Natarajan, Robin Lee, Ping-Wei Wang, Shyue-Shyh Lin, Chung-Cheng Wu, Kuan-Lun Cheng, Min Cao, George H. Chang

Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013