Yen-Huei Chen
Orcid: 0000-0002-9254-5256
According to our database1,
Yen-Huei Chen
authored at least 18 papers
between 2009 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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On csauthors.net:
Bibliography
2024
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm<sup>2</sup> and 3.78Mb/mm<sup>2</sup> Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
A 5-nm 254-TOPS/W 221-TOPS/mm<sup>2</sup> Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V<sub>MIN</sub> Applications.
IEEE J. Solid State Circuits, 2021
A 5nm 5.7GHz@1.0V and 1.3GHz@0.5V 4kb Standard-Cell- Based Two-Port Register File with a 16T Bitcell with No Half-Selection Issue.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
An 89TOPS/W and 16.3TOPS/mm<sup>2</sup> All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A 7nm 2.1GHz Dual-Port SRAM with WL-RC Optimization and Dummy-Read-Recovery Circuitry to Mitigate Read- Disturb-Write Issue.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2017
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2016
A 16nm dual-port SRAM with partial suppressed word-line, dummy read recovery and negative bit-line circuitries for low VMIN applications.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016
A 64-Kb 0.37V 28nm 10T-SRAM with mixed-Vth read-port and boosted WL scheme for IoT applications.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016
2015
A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.
IEEE J. Solid State Circuits, 2015
17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2013
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013
2012
Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM.
IEEE J. Solid State Circuits, 2012
2009
A 0.6 V Dual-Rail Compiler SRAM Design on 45 nm CMOS Technology With Adaptive SRAM Power for Lower VDD_min VLSIs.
IEEE J. Solid State Circuits, 2009