Hank Cheng
According to our database1,
Hank Cheng
authored at least 5 papers
between 2013 and 2021.
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Bibliography
2021
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V<sub>MIN</sub> Applications.
IEEE J. Solid State Circuits, 2021
2020
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2017
12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2013
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013