Giuk Kim

According to our database, Giuk Kim authored at least 5 papers between 2024 and 2026.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2026

Probabilistic Tree Inference Enabled by FDSOI Ferroelectric FETs.

Pengyu Ren, Xingtian Wang, Boyang Cheng, Jiahui Duan, Giuk Kim, Xuezhong Niu, Halid Mulaosmanovic, Stefan Dünkel, Sven Beyer, X. Sharon Hu, Ningyuan Cao, Kai Ni

CoRR, April, 2026

2025

Record-Low EOT(3.6Å) & Jleak(7×10^-8A/cm²@0.8V) HZO by Dielectric-Selective Microwave Annealing.

Hunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, Hyung-Jun Kim, Jinho Ahn

Proceedings of the IEEE International Reliability Physics Symposium, 2025

The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications.

Hyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling.

Giuk Kim, Hyojun Choi, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology.

Venkateswarlu Gaddam, Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn, Sanghun Jeon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024