Stefan Dünkel

According to our database, Stefan Dünkel authored at least 13 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate.

Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni

CoRR, 2024

2023

Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator.

Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe

Adv. Intell. Syst., June, 2023

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications.

Paritosh Meihar, Rowtu Srinu, Sandip Lashkare, Ajay Kumar Singh, Halid Mulaosmanovic, Veeresh Deshpande, Stefan Dünkel, Sven Beyer, Udayan Ganguly

CoRR, 2023

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET.

Zijian Zhao, Shan Deng, Swetaki Chatterjee, Zhouhang Jiang, Muhammad Shaffatul Islam, Yi Xiao, Yixin Xu, Scott Meninger, Mohamed Mohamed, Rajiv V. Joshi, Yogesh Singh Chauhan, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Sven Beyer, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni

CoRR, 2023

FeFET-based MirrorBit cell for High-density NVM storage.

Paritosh Meihar, Rowtu Srinu, Vivek Saraswat, Sandip Lashkare, Halid Mulaosmanovic, Stefan Dünkel, Sven Beyer, Udayan Ganguly

CoRR, 2023

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications.

Franz Müller, Sourav De, Maximilian Lederer, Raik Hoffmann, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Tarek Ali, Halid Mulaosmanovic, Stefan Dünkel, Johannes Müller, Sven Beyer, Gerald Gerlach

Proceedings of the IEEE International Memory Workshop, 2023

2022

Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines.

Yixin Xu, Zijian Zhao, Yi Xiao, Tongguang Yu, Halid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, Sven Beyer, Xiao Gong, Rajiv V. Joshi, X. Sharon Hu, Shixian Wen, Amanda Sofie Rios, Kiran Lekkala, Laurent Itti, Eric Homan, Sumitha George, Vijaykrishnan Narayanan, Kai Ni

CoRR, 2022

Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window.

Zhouhang Jiang, Yi Xiao, Swetaki Chatterjee, Halid Mulaosmanovic, Stefan Dünkel, Steven Soss, Sven Beyer, Rajiv V. Joshi, Yogesh Singh Chauhan, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process.

Nicki Mika, Thomas Melde, Stefan Dünkel, Michael Otto, Francois Weisbuch, Peter Krottenthaler, Thomas Mikolajick

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Hardware Functional Obfuscation With Ferroelectric Active Interconnects.

Tongguang Yu, Yixin Xu, Shan Deng, Zijian Zhao, Nicholas Jao, You Sung Kim, Stefan Dünkel, Sven Beyer, Kai Ni, Sumitha George, Vijaykrishnan Narayanan

CoRR, 2021

Novel embedded single poly floating gate flash demonstrated in 22nm FDSOI technology.

Thomas Melde, Martin Trentzsch, Stefan Dünkel, R. Richter, Michael Otto, H. Giesler, Francois Weisbuch, N. Weddeler, Sven Beyer

Proceedings of the IEEE International Memory Workshop, 2021

2019

Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning.

Carlo Cagli, Luca Perniola, Fred Gaillard, Stefan Dünkel, Thomas Melde, B. Mueller, Martin Trentzsch, Sven Wittek, Sven Beyer

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory.

Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dünkel, Martin Trentzsch, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck

Proceedings of the 49th European Solid-State Device Research Conference, 2019