Heat Bit Park

According to our database, Heat Bit Park authored at least 2 papers between 2014 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

A 1.2V 64Gb 341GB/S HBM2 stacked DRAM with spiral point-to-point TSV structure and improved bank group data control.

Jin-Hee Cho, Jihwan Kim, Wooyoung Lee, Dong-Uk Lee, Tae-Kyun Kim, Heat Bit Park, Chunseok Jeong, Myeong-Jae Park, Seung Geun Baek, Seokwoo Choi, Byung Kuk Yoon, Young Jae Choi, Kyo Yun Lee, Daeyong Shim, Jonghoon Oh, Jinkook Kim, Seok-Hee Lee

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2014

25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV.

Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Hongjung Kim, Ju Young Kim, Young Jun Park, Jae Hwan Kim, Dae Suk Kim, Heat Bit Park, Jin Wook Shin, Jang Hwan Cho, Ki Hun Kwon, Min Jeong Kim, Jaejin Lee, Kunwoo Park, Byong-Tae Chung, Sung-Joo Hong

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014