Hongjung Kim
According to our database1,
Hongjung Kim
authored at least 5 papers
between 2014 and 2020.
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Collaborative distances:
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Bibliography
2020
A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx.
IEEE J. Solid State Circuits, 2020
2019
A 1.1V 1ynm 6.4Gb/s/pin 16Gb DDR5 SDRAM with a Phase-Rotator-Based DLL, High-Speed SerDes and RX/TX Equalization Scheme.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2016
18.3 A 1.2V 64Gb 8-channel 256GB/s HBM DRAM with peripheral-base-die architecture and small-swing technique on heavy load interface.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
Proceedings of the International SoC Design Conference, 2016
2014
25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014