Byong-Tae Chung
According to our database1,
Byong-Tae Chung
authored at least 12 papers
between 2009 and 2014.
Collaborative distances:
Collaborative distances:
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Bibliography
2014
25.3 A 1.35V 5.0Gb/s/pin GDDR5M with 5.4mW standby power and an error-adaptive duty-cycle corrector.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2013
An adaptive-bandwidth PLL for avoiding noise interference and DFE-less fast precharge sampling for over 10Gb/s/pin graphics DRAM interface.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013
2012
A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology.
IEEE J. Solid State Circuits, 2012
A 1.0-ns/1.0-V Delay-Locked Loop With Racing Mode and Countered CAS Latency Controller for DRAM Interfaces.
IEEE J. Solid State Circuits, 2012
A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
A 1.2V 38nm 2.4Gb/s/pin 2Gb DDR4 SDRAM with bank group and ×4 half-page architecture.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
2011
A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011
2010
Frequency-independent fast-lock register-controlled DLL with wide-range duty cycle adjuster.
Proceedings of the Annual IEEE International SoC Conference, SoCC 2010, 2010
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010
A 7.7mW/1.0ns/1.35V delay locked loop with racing mode and OA-DCC for DRAM interface.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010
2009
A 1.6V 3.3Gb/s GDDR3 DRAM with dual-mode phase- and delay-locked loop using power-noise management with unregulated power supply in 54nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009