Hidehiro Asai

Orcid: 0000-0003-1123-4630

According to our database1, Hidehiro Asai authored at least 7 papers between 2021 and 2026.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

On csauthors.net:

Bibliography

2026
On the Improvement of Gate Fidelity in Spin Qubits With Two-Level Fluctuators at Higher Temperatures.
IEEE Access, 2026

2024
Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs.
IEEE Access, 2024

Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation.
Proceedings of the Device Research Conference, 2024

2023
Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality.
IEEE Access, 2023

Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021


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