Hikaru Tamura

According to our database, Hikaru Tamura authored at least 5 papers between 2013 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS.

Tatsuya Onuki, Wataru Uesugi, Hikaru Tamura, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato, Tri Rung Yew, Chen Bin Lin, J. Y. Wu, Chi Chang Shuai, Shao Hui Wu, James Myers, Klaus Doppler, Masahiro Fujita, Shunpei Yamazaki

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2014

Embedded SRAM and Cortex-M0 Core Using a 60-nm Crystalline Oxide Semiconductor.

Hikaru Tamura, Kiyoshi Kato, Takahiko Ishizu, Wataru Uesugi, Atsuo Isobe, Naoaki Tsutsui, Yasutaka Suzuki, Yutaka Okazaki, Yukio Maehashi, Jun Koyama, Yoshitaka Yamamoto, Shunpei Yamazaki, Masahiro Fujita, James Myers, Pekka Korpinen

IEEE Micro, 2014

A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor.

Atsuo Isobe, Hikaru Tamura, Kiyoshi Kato, Takuro Ohmaru, Wataru Uesugi, Takahiko Ishizu, Tatsuya Onuki, Kazuaki Ohshima, Takanori Matsuzaki, Atsushi Hirose, Yasutaka Suzuki, Naoaki Tsutsui, Tomoaki Atsumi, Yutaka Shionoiri, Gensuke Goto, Jun Koyama, Masahiro Fujita, Shunpei Yamazaki

Proceedings of the Symposium on VLSI Circuits, 2014

Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating.

Hikaru Tamura, Kiyoshi Kato, Takahiko Ishizu, Tatsuya Onuki, Wataru Uesugi, Takuro Ohmaru, Kazuaki Ohshima, Hidetomo Kobayashi, Seiichi Yoneda, Atsuo Isobe, Naoaki Tsutsui, Suguru Hondo, Yasutaka Suzuki, Yutaka Okazaki, Tomoaki Atsumi, Yutaka Shionoiri, Yukio Maehashi, Gensuke Goto, Masahiro Fujita, James Myers, Pekka Korpinen, Jun Koyama, Yoshitaka Yamamoto, Shunpei Yamazaki

Proceedings of the 2014 IEEE Symposium on Low-Power and High-Speed Chips, 2014

2013

Processor with 4.9-μs break-even time in power gating using crystalline In-Ga-Zn-oxide transistor.

Hidetomo Kobayashi, Kiyoshi Kato, Takuro Ohmaru, Seiichi Yoneda, Tatsuji Nishijima, Shuhei Maeda, Kazuaki Ohshima, Hikaru Tamura, Hiroyuki Tomatsu, Tomoaki Atsumi, Yutaka Shionoiri, Yukio Maehashi, Jun Koyama, Shunpei Yamazaki

Proceedings of the 2013 IEEE Symposium on Low-Power and High-Speed Chips, 2013