Ronald J. Bolam

According to our database, Ronald J. Bolam authored at least 3 papers between 1999 and 2005.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2005

Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration.

Terence B. Hook, Ronald J. Bolam, William Clark, Jay S. Burnham, Nivo Rovedo, Laura Schutz

Microelectron. Reliab., 2005

1999

Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations.

Terence B. Hook, Jay S. Burnham, Ronald J. Bolam

IBM J. Res. Dev., 1999

Device and circuit design issues in SOI technology.

Ghavam G. Shahidi, Atul Ajmera, Fariborz Assaderaghi, Ronald J. Bolam, Harold Hovel, Effendi Leobandung, Werner Rausch, Devendra Sadana, Dominic Schepis, Lawrence F. Wagner, Larry Wissel, Kun Wu, Bijan Davai

Proceedings of the IEEE 1999 Custom Integrated Circuits Conference, 1999