Jean-Daniel Arnould

According to our database, Jean-Daniel Arnould authored at least 6 papers between 2013 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation.

Joycelyn Hai, Florian Cacho, X. Federspiel, Tidjani Garba-Seybou, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Accurate Design Method for Millimeter Wave Distributed Amplifier Based on Four-Port Chain (ABCD) Matrix Model.

Mohamad El-Chaar, Loic Vincent, Jean-Daniel Arnould, Antonio Augusto Lisboa de Souza, Sylvain Bourdel, Florence Podevin

IEEE Trans. Circuits Syst. I Regul. Pap., 2022

Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications.

Joycelyn Hai, Florian Cacho, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould, Jeremie Forest, Vincent Knopik, Xavier Garros

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Integrated Wideband Millimeter-Wave Bias-Tee - Application to Distributed Amplifier Biasing.

Mohamad El-Chaar, Antonio Augusto Lisboa de Souza, Manuel J. Barragán, Florence Podevin, Sylvain Bourdel, Jean-Daniel Arnould

Proceedings of the 19th IEEE International New Circuits and Systems Conference, 2021

Estimation of Oxide Breakdown Voltage During a CDM Event Using Very Fast Transmission Line Pulse and Transmission Line Pulse Measurements.

Chloe Troussier, Johan Bourgeat, Blaise Jacquier, Emmanuel Simeu, Jean-Daniel Arnould

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2013

A 2.14GHz watt-level power amplifier with passive load modulation in a SOI CMOS technology.

Gauthier Tant, Alexandre Giry, Pierre Vincent, Jean-Daniel Arnould, Jean-Michel Fournier

Proceedings of the ESSCIRC 2013, 2013