Moonyoung Jeong

According to our database, Moonyoung Jeong authored at least 4 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

A Study on the Origin of Dynamic Charge Loss of Next Generation DRAM Cell Array Transistor.

Moonyoung Jeong, Hyungjun Noh, Sangho Lee, Yootak Jun, Jeonghoon Oh, Jemin Park, Jaihyuk Song

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Cell to Core-Periphery Overlap (C2O) Based on BCAT for Next Generation DRAM.

Kiseok Lee, Hongjun Lee, Hyungeun Choi, Jeongsu Kim, Kyunghwan Kim, Moonyoung Jeong, Soohyun Bae, Hyebin Kim, Jiyun Lee, Minsoo Kim, Keunnam Kim, Huijung Kim, Sungmin Park, Taejin Park, Jin-Woo Han, Jeonghoon Oh, Yong Kwan Kim, Sungsoo Yim, Bongsoo Kim, Jemin Park, Jaihyuk Song

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor.

Moonyoung Jeong, Sangho Lee, Yootak Jun, Kiseok Lee, Seokhan Park, Jeonghoon Oh, Ilgweon Kim, Jemin Park

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -.

Jung-Won Han, S. H. Park, Moonyoung Jeong, K. N. Kim, H. J. Kim, J. C. Shin, S. M. Park, S. H. Shin, S. W. Park, K. S. Lee, J. H. Lee, S. H. Kim, B. C. Kim, Myoung H. Jung, I. Y. Yoon, H. Kim, S. U. Jang, K. J. Park, Y. K. Kim, I. G. Kim, J. H. Oh, S. Y. Han, B. S. Kim, Bong Jin Kuh, J. M. Park

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023