Yoshino K. Fukai

According to our database, Yoshino K. Fukai authored at least 5 papers between 2002 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2012

Performance of InP/InGaAs HBTs with a Thin Highly <i>N</i>-Type Doped Layer in the Emitter-Base Heterojunction Vicinity.

Kenji Kurishima, Minoru Ida, Norihide Kashio, Yoshino K. Fukai

IEICE Trans. Electron., 2012

2009

Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal.

Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki

Microelectron. Reliab., 2009

2008

Highly Reliable Submicron InP-Based HBTs with over 300-GHz <i>f</i>_t.

Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata

IEICE Trans. Electron., 2008

2006

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate.

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni

IEICE Electron. Express, 2006

2002

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs.

Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama

Microelectron. Reliab., 2002