Patrick Austin

According to our database, Patrick Austin authored at least 7 papers between 2004 and 2022.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2022

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs.

Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, Frédéric Morancho

Proceedings of the 29th International Conference on Mixed Design of Integrated Circuits and System, 2022

2015

Failure analysis of ESD-stressed SiC MESFET.

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin

Microelectron. Reliab., 2015

An improved junction termination design using deep trenches for superjunction power devices.

Sylvain Noblecourt, Frederic Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli

Proceedings of the 22nd International Conference Mixed Design of Integrated Circuits & Systems, 2015

2014

Analysis of an ESD failure mechanism on a SiC MESFET.

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin

Microelectron. Reliab., 2014

2011

Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs.

Moustafa Zerarka, Patrick Austin, Marise Bafleur

Microelectron. Reliab., 2011

2008

Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications.

Jean-Luc Fock Sui Too, B. Chauchat, Patrick Austin, Patrick Tounsi, Michel Mermet-Guyennet, Régis Meuret

Microelectron. Reliab., 2008

2004

New distributed model of NPT IGBT dedicated to power circuits design.

Guillaume Bonnet, Patrick Austin, Jean-Louis Sanchez

Microelectron. Reliab., 2004