Philippe Godignon

According to our database, Philippe Godignon authored at least 23 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration.

Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier

Proceedings of the 30th International Conference on Mixed Design of Integrated Circuits and System, 2023

2021

60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes.

Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Philippe Godignon, Cosmin Romanitan, Matei Serbanescu, Adrian Tulbure

Sensors, 2021

2017

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.

Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Andrei Mihaila, Maria R. Rogina, Alberto Rodriguez, Javier Sebastián

IEEE Trans. Ind. Electron., 2017

2016

Power cycling analysis method for high-voltage SiC diodes.

Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon

Microelectron. Reliab., 2016

2015

SiC Integrated Circuit Control Electronics for High-Temperature Operation.

Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon

IEEE Trans. Ind. Electron., 2015

Failure analysis of ESD-stressed SiC MESFET.

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin

Microelectron. Reliab., 2015

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices.

Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Analysis of an ESD failure mechanism on a SiC MESFET.

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin

Microelectron. Reliab., 2014

Temperature effects on the ruggedness of SiC Schottky diodes under surge current.

Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà

Microelectron. Reliab., 2014

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing.

Javier Leon, Xavier Perpiñà, Miquel Vellvehí, Xavier Jordà, Philippe Godignon

Proceedings of the 44th European Solid State Device Research Conference, 2014

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs.

Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.

Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán

Proceedings of the European Solid-State Device Research Conference, 2013

High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs.

Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán

Proceedings of the ESSCIRC 2013, 2013

2012

Wafer scale and reliability investigation of thin HfO₂·AlGaN/GaN MIS-HEMTs.

Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens

Microelectron. Reliab., 2012

Enhanced power cycling capability of SiC Schottky diodes using press pack contacts.

Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán

Microelectron. Reliab., 2012

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.

Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

SiC Schottky Diodes for Harsh Environment Space Applications.

Philippe Godignon, Xavier Jordà, Miquel Vellvehí, Xavier Perpiñà, Viorel Banu, Demetrio López, Juan Barbero, Pierre Brosselard, Silvia Massetti

IEEE Trans. Ind. Electron., 2011

2008

Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress.

Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán

Microelectron. Reliab., 2008

2007

Coupled electro-thermal simulation of a DC/DC converter.

Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán

Microelectron. Reliab., 2007

Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications.

Gemma Gabriel, Ivan Erill, Jaume Caro, Rodrigo Gómez, Dolors Riera, Rosa Villa, Philippe Godignon

Microelectron. J., 2007

2004

Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.

Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán

Microelectron. J., 2004

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán

Microelectron. J., 2004

2001

The electron irradiation effects on silicon gate dioxide used for power MOS devices.

Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu

Microelectron. Reliab., 2001