Alessandro Chini

According to our database, Alessandro Chini authored at least 15 papers between 2005 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs.

Marcello Cioni, G. Giorgino, Alessandro Chini, Carmine Miccoli, Maria Eloisa Castagna, M. Moschetti, C. Tringali, Ferdinando Iucolano

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications.

Marcello Cioni, Nicolò Zagni, Alessandro Chini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs.

Marcello Cioni, Patrick Fiorenza, Fabrizio Roccaforte, Mario Saggio, S. Cascino, Angelo Alberto Messina, Vincenzo Vinciguerra, Michele Calabretta, Alessandro Chini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps.

Marcello Cioni, Nicolò Zagni, Alessandro Chini

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs.

Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.

Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.

Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2018

A novel GaN HEMT degradation mechanism observed during HTST test.

Ferdinando Iucolano, Antonino Maurizio Parisi, Santo Reina, Alessandro Chini

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

2014

Traps localization and analysis in GaN HEMTs.

Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

Microelectron. Reliab., 2014

Reliability Investigation of GaN HEMTs for MMICs Applications.

Alessandro Chini, Gaudenzio Meneghesso, Alessio Pantellini, Claudio Lanzieri, Enrico Zanoni

Micromachines, 2014

2013

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs.

Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2013

2012

Field plate related reliability improvements in GaN-on-Si HEMTs.

Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2012

2010

Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress.

Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini

Microelectron. Reliab., 2010

2005

DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.

Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali

Microelectron. Reliab., 2005